![]() ![]() Due to single majority current carriers present in FET, lesser noise is produced as compared to BJT. Therefore, stable circuits are obtained with FET. Transistor to transistor matching is simple. Therefore, circuit designing and biasing is quite easier. FET have identical Drain and Source terminals. It is voltage controlled device.It implies less power consumption, less heat generation and more stability as compared to BJT. Current mirror circuit can be easily designed with the help of FET. Further it can act as good buffer/ isolator as well. It can be used to drive higher input impedance. The chances of thermal runaway are quite higher(the higher the temperature, the higher the gain, the higher the current, the higher the temperature, and so on).įET have higher input impedance. It leads to unstable design of BJT transistor circuit.It has poitive temperature coeficient. Therefore, transistor to transistor matching is quite difficult in BJTs. ![]() They have significant variations from transistor to other. It leads to higher power consumption and more heat generation as compared to its other counterparts.Its quite difficult to obtain identical BJT. Thus, amplifiers that need to drive lower input impedance and deliver high power gain BJT prove to be productive.īJTs are current controlled devices. It implies that little change in input current/ voltage leads to more amplification at output. They give higher gain as compared to MOSFET. CC Configuration : High Current Gain but low Voltage Gain and medium power gain.īJTs have higher speed of operation due to little input capacitance.CE Configuration : Medium Current and Voltage Gain, Very high power gain.CB Configuration : High Voltage Gain but low Current Gain and low power gain.Different characteristics of these arrangements are as follow: Cut-off : The transistor is “Fully-OFF” operating as a switch and Ic = 0ĭifferent configurations are employed in BJTS namely Common Base(CB), Common Emitter(CE), Common Collector(CC).Saturation : The transistor is “Fully-ON” operating as a switch and Ic = I(saturation).Active Region : The transistor operates as an amplifier and Ic = β.Ib.The bipolar transistors have the ability to operate within three different regions: Their ability to change between two states enables it to act as “switch” in digital electronics and “amplifier” in analog electronics. The application part of BJT includes they can act either as conductor or as an insulator when small signal voltage is applied. BJTs are less stable than other counterparts because two current carriers produce more noise. FET,MOSFET and CMOS are unipolar devices that current flow is due to majority current carriers only. Two types of current flow in the transistor that is with the help of minority and majority current carriers. BJTs are current controlled devices while MOSFET and CMOS are voltage controlled devices.īJTS are basically three terminal devices. ![]() Unlike passive devices such as diodes, inductors, resistors, capacitors, transformers, they provide certain degree of control over their functioning. BJT is acronym of for Bipolar Field effect Transistor, MOSFET stands for Metal Oxide Field Effect Transistor and CMOS stands for Complementary Metal Oxide Semiconductor. BJT, MOSFET and CMOS all three of them are transistors. ![]()
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